Study on electrical defects level in single layer two-dimensional Ta_2O_5

Two-dimensional atomic-layered material is a recent research focus, and single layer Ta_2O_5 used as gate dielectric in field-effect transistors is obtained via assemblies of Ta_2O_5 nanosheets. However, the electrical performance is seriously affected by electronic defects existing in Ta_2O_5. Therefore, spectroscopic ellipsometry is used to calculate the transition energies and corresponding probabilities for two different charged oxygen vacancies, whose existence is revealed by x-ray photoelectron spectroscopy analysis. Spectroscopic ellipsometry fitting also calculates the thickness of single layer Ta_2O_5,exhibiting good agreement with atomic force microscopy measurement. Nondestructive and noncontact spectroscopic ellipsometry is appropriate for detecting the electrical defects level of single layer Ta_2O_5.     

Electronic transport of bilayer graphene with asymmetry line defects

In this paper,we study the quantum properties of a bilayer graphene with(asymmetry) line defects.The localized states are found around the line defects.Thus,the line defects on one certain layer of the bilayer graphene can lead to an electric transport channel.By adding a bias potential along the direction of the line defects,we calculate the electric conductivity of bilayer graphene with line defects using the Landauer-Biittiker theory,and show that the channel affects the electric conductivity remarkably by comparing the results with those in a perfect bilayer graphene.This one-dimensional line electric channel has the potential to be applied in nanotechnology engineering.     

Intrinsic intermediate gap states of TiO2 materials and their roles in charge carrier kinetics

Titanium dioxide (TiO₂) is regarded as an important prototype photocatalytic material for several decades. The charge carrier kinetics determines the photocatalytic properties of TiO₂ materials; this is found to be greatly dependent on electronic structures. It has been revealed that the intrinsic intermediate gap states (intrinsic GSs) play a significant role in charge carrier kinetics that drive the photocatalytic processes of TiO₂ materials, which are not well summarized until now. Motivated by this thought, the purpose of this review focuses on physiochemical science of the intrinsic GSs of TiO₂ materials and their important role in charge carrier kinetics. We first give a summary on the chemical resources of the intrinsic GSs in TiO₂ and their physiochemical nature. Their general energy distribution, charge carrier population, and the associated thermodynamic properties are also elaborated from an overall viewpoint. We further carefully summarize and compare the experimental studies on the energy and the density distribution of the intrinsic GSs and discuss the associated chemical resources and charge carrier localizations. Trapping is the dominant function of intrinsic GSs in the charge carrier kinetics of TiO₂ materials. The significant effect of trapping on the transport, recombination, and interfacial transfer of charge carriers are also comprehensive summarized. Furthermore, the effects of charge carrier kinetics on photocatalytic performances are also discussed to some extents. Because of the importance of intrinsic GSs in modulating charge carrier kinetics, it is expected to increase the photocatalytic activity by engineering the intrinsic GSs, not only for TiO₂ materials, but also for the other semiconductor photocatalysts.     

Recent Advances in the Use of Black TiO2 for Production of Hydrogen and Other Solar Fuels

Black TiO₂ has emerged as one of the most promising photocatalysts recently discovered. The reason behind its catalytic activity is considered to be due to the presence of defects and Ti³⁺ species at the surface of black TiO₂ nanostructures, which are crucial for its diverse applications. Moreover, disordered/crystalline surface layers and bulk regions have been identified and appear to influence the intrinsic properties of the material. Here, we present the latest studies on the use of black TiO₂ for metal free hydrogen production, as well as for CO₂ photoreduction and N₂ photofixation. After highlighting the structure/property relations, we conclude with some critical questions and suggest further topics of research in order to better understand the underlying mechanisms of light absorption in black TiO₂, especially towards solar fuels production.     

钇铝石榴石在高压下的光学性质第一性原理研究

本文采用基于密度泛函理论(DFT)的第一性原理方法,分别计算了120 GPa的压力范围内钇铝石榴石理想晶体和含氧空位点缺陷晶体的光学性质.计算数据表明:(1)在120 GPa的压力范围内其理想晶体和含2+价氧离子空位(形成能最低)的缺陷晶体在可见光区不存在光吸收(是透明的).(2)压力加载将导致其反射谱峰值强度降低,且空位缺陷的存在使其峰值强度进一步减弱.这些结果对进一步实验有重要的参考价值.     

相变及空位缺陷对AlN在高压下光学性质的影响

采用基于密度泛函理论(DFT)的第一性原理方法, 计算了AlN理想晶体和含铝、氮空位点缺陷晶体在100 GPa压力范围内的光学性质. 波长在532 nm处的折射率计算结果表明：AlN从纤锌矿结构相转变为岩盐矿结构相将导致其折射率增加; 铝空位缺陷将引起AlN岩盐矿结构相的折射率增大, 而氮空位缺陷却导致其折射率降低. 能量损失谱计算数据指明：结构相变使得AlN能量损失谱蓝移、主峰峰值强度增强;铝和氮空位缺陷将导致AlN岩盐矿结构相的能量损失谱主峰进一步蓝移、峰值强度再次增强. 计算预测的结果将为进一步的实验探究提供理论参考.     

The effect of controlled ion bombardment on the electronic structure of the Si(0 0 1) surface

We have studied the effects of controlled ion bombardment on the electronic structure of the Si(0 0 1) surface. The surface was exposed to various doses of Ar⁺ ions accelerated towards the surface at 500 eV. X-ray photoelectron spectroscopy (XPS) spectra of the irradiated H-terminated Si(0 0 1) surface reveal the appearance of peaks that are associated with the presence of cleaved Si bonds. Ultraviolet photoelectron spectroscopy (UPS) spectra of the irradiated Si(0 0 1)2 × 1 surface show that the dimer dangling-bond surface state decays monotonically with increasing dose. These results, coupled with previous scanning tunneling microscopy (STM) studies, indicate that the breaking of dimers, and possibly the creation of adatom-like defects, during ion irradiation are responsible for the changes in the electronic structure of the valence band for this surface.     

Vacancy formation and CO adsorption on gold-doped ceria surfaces

We study the effect of gold doping on oxygen vacancy formation and CO adsorption on the (1 1 0) and (1 0 0) surfaces of ceria by using density functional theory, corrected for on-site Coulomb interactions (DFT + U). The Au dopant substitutes a Ce atom in the surface layer, leading to strong structural distortions. The formation of one oxygen vacancy near a dopant atom is energetically “downhill” while the formation of a second vacancy around the same dopant requires energy. When the surface is in equilibrium with gaseous oxygen at 1 atm and room temperature there is a 0.4 probability that no oxygen atom left the neighborhood of a dopant. This means that the sites where the dopant has not lost oxygen are very active in oxidation reactions. Above 400 K almost all dopants have an oxygen vacancy next to them and an oxidation reaction in such a system takes place by creating a second vacancy. The energy required to form a second vacancy is smaller on (1 1 0) than on (1 0 0). On the (1 1 0) surface, it is much easier to form a second vacancy on the doped surface than the first vacancy on the undoped surface. The energy required to form a second oxygen vacancy on (1 0 0) is comparable to that of forming the first vacancy on the undoped surface. Thus doping makes the (1 1 0) surface a better oxidant but it has a small effect on the oxidative power of the (1 0 0) surface. On the (1 1 0) surface CO adsorption results in formation of a carbonate-like structure, similar to the undoped surface, while on the (1 0 0) surface direct formation of CO₂ is observed, in contrast to the undoped surface. The Au dopant weakens the bond of the surrounding oxygen atoms to the oxide making it a better oxidant, facilitating CO oxidation.     

Topological Vortices in a Spin-Triplet Superconductor

Based on the complex three-component order parameter model of a spin-triplet superconductor, by using the C-mapping theory, we derive a new equation describing the distribution of the magnetic field for vortices, which can be reduced to the modified London equation in the case of ｜ψ^2｜^2 ~- ｜ψ^3｜^2 = 0 and Wl^1= 1. A magnetic flux quantization condition for vortices in a spin-triplet superconductor is also derived, which is topological-invariant. Fhrthermore, the branch processes during the evolution of the vortices in a spin-triplet superconductor are discussed. We also point out that the sum of the magnetic flux quantization that those vortices carried is 2nФo （Фo is the unit magnetic flux）, that is to say, the sum of winding number is even, which needs to be proved by experiment.